A Virtual Instrument Environment to Characterize Reverse Recovery Parameters in LDMOS Devices

Measuring and quantifying reverse recovery parameters in high speed LDMOS devices is an important task in their characterization. A robust and automated procedure is required to achieve accurate and repeatable parameter quantification. This work focuses in the development of a virtual instrumentation setup to perform the reverse recovery parameter extraction in an automated manner. We define the architectural and functional requirements of such an environment to then introduce our proposed solution. The proposed design was developed in LabVIEWTMfor a low-cost instrument platform and its functionality assessed under several conditions to guarantee the consistency and repeatability of the measured data.